www.DataSheet4U.com
UTC 2SD1616/A
NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR
DESCRIPTION
*Audi...
www.DataSheet4U.com
UTC 2SD1616/A
NPN EPITAXIAL SILICON
TRANSISTOR
NPN EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
*Audio frequency power amplifier *Medium speed switching
1
TO-92
1: EMITTER
2: COLLECTOR
3: BASE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Storage Temperature Junction Temperature Total Power Dissipation (Ta=25°C) Collector to Base Voltage: D1616 D1616A Collector to Emitter Voltage: D1616 D1616A Emitter to Base Voltage Collector Current (DC) Collector Current (*Pulse) Note: (*) Pulse width≤10ms, Duty cycle<50% VEBO Ic Ic VCEO
SYMBOL
Tstg Tj Pc VCBO
VALUE
-55 ~+150 150 750 60 120 50 60 6 1 2
UNIT
°C °C mW V V V A A
CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base Emitter On Voltage DC Current Gain: D1616 D1616A Current Gain Bandwidth Product Output Capacitance Turn On Time
SYMBOL
ICBO IEBO VCE(SAT) VBE(SAT) VBE(ON) hFE1 hFE2 fT Cob ton
TEST CONDITIONS
VCB=60V VEB= 6V IC=1A, IB=50mA IC=1A, IB=50mA VCE=2V, IC=50mA VCE=2V, IC=100mA VCE=2V, IC=1A VCE=2V, IC=100mA VCB=10V, f=1MHz VCE=10V, IC=100mA
MIN.
TYP.
MAX.
100 100 0.3 1.2 700 600 400
UNIT
nA nA V V mV
600 135 135 81 100
0.15 0.9 640
160 19 0.07
MHz pF us
UTC
UNISONIC TECHNOLOGIES
CO., LTD.
1
QW-R201-008,A
www.DataSheet4U.com
UTC 2SD1616/A
CHARACTERISTIC
Storage Time Fall Time
NPN EPITAXIAL SILICON
TRANSISTOR
SYMBOL
ts tf
TEST CONDITIONS
IB1=-IB2=10mA VBE(off)=-2~-3V
MIN.
TYP.
...