D1427

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1427 DESCRIPTION www.dat·aWshiethet4TuO.co-3mPH package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PH) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current IB Base current PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 1500 600 5 5 2.5 80 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance junction case MAX 1.56 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1427 CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A ICBO Collector cut-off current VCB=500V; IE=0 hFE DC current gain fT Transition freuqency COB Output capacitance VF Diode forward voltage tf Fall time IC=1A ; VCE=5V IC=0.1A ; VCE=10V;f=1MHz IE=0 ; VCB=10V;f=1MHz IF=5A IC=4A;IB1=0.8A MIN ...