CEF09N6
Jul. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 6A ,RDS(ON)= 1.2 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole.
D
6
G
G D S
TO-220F
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter Dr...
