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TLP599G

Toshiba Semiconductor

Photocoupler Photorelay

TLP599G TOSHIBA Photocoupler Photo Relay TLP599G Telecommunication Data Acquisition Measurement Instrumentation Unit in...


Toshiba Semiconductor

TLP599G

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TLP599G TOSHIBA Photocoupler Photo Relay TLP599G Telecommunication Data Acquisition Measurement Instrumentation Unit in mm The TOSHIBA TLP599G consists of a gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a six lead plastic DIP package (DIP6). The TLP599G is a bi-directional switch which can replace mechanical relays in many applications. · · · · · · · Peak off-state voltage: 400V (min.) On-state current: 120mA (max.) (A connection) On-state resistance: 30Ω (max.) (A connection) Insulation thickness: 0.4mm (max.) Isolation voltage: 2500Vrms (min.) UL recognized: UL1577, file no. E67349 Trigger LED current (Ta = 25°C) Trigger LED Current (mA) @ION = 120mA Min. Max. — — 2 5 TOSHIBA 11−7A8 Classification (Note 1) (IFT2) Standard Marking Of Classification T2 T2, blank Pin Configuration (top view) 1 2 3 6 5 4 1 : Anode 2 : Cathode 3 : NC 4 : Drain D1 5 : Source 6 : Drain D2 (Note 1): Application type name for certification test, please use standard product type name, i.e. TLP599G (IFT2) :TLP599G Schematic 1 2 6 5 4 1 2002-09-25 TLP599G Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta ≥ 25°C) LED Peak forward current (100 µs pulse, 100 pps) Reverse voltage Junction temperature Off-state output terminal voltage A connection On-state RMS current Detector B connection C connection A connection On-state current derating (Ta ≥ 25°C) B connection C connection Junction temperature Storage temperature ran...




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