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MRF238

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

MRF238 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380" 4L STUD .112x45° A C B E E B H I J DESCRIPTION: The MRF...


Advanced Semiconductor

MRF238

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Description
MRF238 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380" 4L STUD .112x45° A C B E E B H I J DESCRIPTION: The MRF238 is Designed for 13.6 V FM Large-Signal Amplifier Applications to 175 MHz. D ØC #8-32 UNC-2A F E G MAXIMUM RATINGS DIM MINIMUM inches / mm MAXIMUM inches / mm IC VCE VCB PDISS TSTG 5.0 A (CONT) 18 V 60 V 65 W @ TC = 25 C -65 C to +150 C O O O A B C D E F G H I J .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE Cob GPE η IC = 15 mA TC = 25 C O TEST CONDITIONS IC = 100 mA IE = 5.0 mA VCB = 30 V VCE = 5.0 V VCB = 15 V VCC = 13.6 V Pout = 30 W IC = 1.0 A f = 1.0 MHz f = 160 MHz MINIMUM TYPICAL MAXIMUM 36 18 4.0 2.0 5.0 105 9.0 60 10 130 UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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