MRF237
SILICON NPN RF POWER TRANSISTOR
DESCRIPTION: The MRF237 is designed for large signal power amplifier applicatio...
MRF237
SILICON
NPN RF POWER
TRANSISTOR
DESCRIPTION: The MRF237 is designed for large signal power amplifier applications operating to 225 MHz
PACKAGE STYLE TO-39
MAXIMUM RATINGS
IC VCBO VCEO PDISS TJ TSTG θJC 1.0 A 36 V 18 V 8.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 22 °C/W
1 = EMITTER 2 = BASE 3 = COLLECTOR
TRANS1.SYM
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO hFE COB GPE η IC = 10 mA
TC = 25 °C
TEST CONDITIONS
IC = 5.0 mA IC = 1.0 mA VCE = 15 V VCE = 5.0 V VCB = 15 V VCC = 12.5 V POUT = 4.0 W IC = 250 mA f = 1.0 MHz f = 175 MHz
MINIMUM
18 36 4.0
TYPICAL
MAXIMUM
UNITS
V V V
.25 5.0 15 12 50 14 62 20
mA --pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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