1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
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K9K8G08U1M K9F4G08U0M
Advance FLASH MEMORY
Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash ...
Description
www.DataSheet4U.com
K9K8G08U1M K9F4G08U0M
Advance FLASH MEMORY
Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History
Revision No
0.0
History
1. Initial issue
Draft Date
Nov. 15. 2004
Remark
Advance
DataShee
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The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office.
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DataSheet 4 U .com
www.DataSheet4U.com
K9K8G08U1M K9F4G08U0M
Advance FLASH MEMORY
512M x 8 Bit / 1G x 8 Bits NAND Flash Memory
PRODUCT LIST
Part Number K9F4G08U0M-Y,P K9F4G08U0M-I K9K8G08U1M-I 2.70 ~ 3.60V X8 Vcc Range Organization PKG Type TSOP1 52ULGA
FEATURES
Voltage Supply - 2.70V ~ 3.60V Organization - Memory Cell Array : (512M + 16,384K)bit x 8bit - Data Register : (2K + 64)bit x 8bit Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 20µs(Max.) - Serial Access : 25ns(Min.) Fast Write Cycle Time - Page Program time : 200µs(Typ.) - Block Erase Time : 1.5ms(Typ.) Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - ...
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