K9K8G08U0M

www.DataSheet4U.com K9K8G08U1M K9F4G08U0M Advance FLASH MEMORY Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History 1. Initial issue Draft Date Nov. 15. 2004 Remark Advance DataShee DataSheet4U.com The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. DataSheet4U.com 1 DataSheet 4 U .com www.DataSheet4U.com K9K8G08U1M K9F4G08U0M Advance FLASH MEMORY 512M x 8 Bit / 1G x 8 Bits NAND Flash Memory PRODUCT LIST Part Number K9F4G08U0M-Y,P K9F4G08U0M-I K9K8G08U1M-I 2.70 ~ 3.60V X8 Vcc Range Organization PKG Type TSOP1 52ULGA FEATURES Voltage Supply - 2.70V ~ 3.60V Organization - Memory Cell Array : (512M + 16,384K)bit x 8bit - Data Register : (2K + 64)bit x 8bit Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 20µs(Max.) - Serial Access : 25ns(Min.) Fast Write Cycle Time - Page Program time : 200µs(Typ.) - Block Erase Time : 1.5ms(Typ.) Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - ...