EM512D16

NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM512D16 Advance Information EM512D16 512Kx16 bit Ultra-Low Power Asynchronous Static RAM Overview The EM512D16 is an integrated memory device containing a low power 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The base design is the same as NanoAmp’s standard low voltage version, EM512W16. The device is fabricated using NanoAmp’s advanced CMOS process and high-speed/ultra low-power/ low-voltage circuit technology. The device pinout is compatible with other standard 512K x 16 SRAMs. The device is designed such that a creative user can improve system power and performance parameters through use of it’s unique page mode operation. FIGURE 1: Pin Configuration 1 A LB 23456 OE A0 A1 A2 CE2 B I/O 8 U B A 3 A 4 CE1 I/O 0 C I/O 9 I/O10 A 5 A 6 I/O 1 I/O 2 D VS S I/O11 A 17 A 7 I/O 3 VCC E VCCQ I/O12 N C A 16 I/O 4 VS S F I/O14 I/O13 A 14 A 15 I/O 5 I/O 6 G I/O15 N C A 12 A 13 WE I/O 7 H A18 A8 A9 A10 A11 NC 48 Pin BGA (top) Features Dual Voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.7 to 2.2 Volts Extended Temperature Range: -40 to +85 oC Fast Cycle Time: Random Access < 70 ns Page Mode < 25 ns Very Low Operating Current: ICC < 5 mA typical at 2V, 10 Mhz Very Low Standby Current: ISB < 2 uA @ 55 oC 16 Word Fast Page-Mode Operation 48-Pin BGA or Known Good Die available TABLE 1: Pin Descriptions ...