MBM200GS6AW

IGBT MODU ODULE MBM200GS6AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm 94 4-Fast-on Terminal #110 G2 E2 FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base). 3-M5 2- φ 5.6 16 80 16 E2 16 C1 E1 C2E1 G1 23 7 12 6 35 23 39.5 φ 0.8 30 C2E1 G2 E2 E2 C1 E1 G1 Weight: 200 (g) TERMINALS ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit V V A A W °C °C VRMS N.m (kgf.cm) MBM200GS6AW 600 ±20 200 400 200 400 600 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.96(20) 1.96(20) DC 1ms DC 1ms 12 17 25 35 (1) Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting (2) (3) Notes:(1)RMS Current of Diode 60Arms max. (2)(3)Recommended Value 1.67N.m(17kgf.cm) CHARACTERISTICS Item (Tc=25°C ) Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES mA 1.0 VCE=600V,VGE=0V Gate Emitter Leakage Current IGES nA ±500 VGE=±20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 1.9 2.5 IC=200A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =200mA Input Capacitance Cies pF 9,700 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.2 0.4 VCC=300V ms Turn On Time ton 0.3 0.6 RL=1.5W Switching Times Fall Time tf 0.25 0.35 RG=12W (4) ...