NIF62514

NIF62514 Preferred Device Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp. Features http://onsemi.com 6.0 AMPERES* 40 VOLTS CLAMPED RDS(on) = 90 mW Drain Overvoltage Protection MPWR Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection Low RDS(on) IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection Gate Input RG ESD Protection Temperature Limit Current Limit Current Sense Source MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain-to-Source Voltage Internally Clamped Drain-to-Gate Voltage Internally Clamped (RGS = 1.0 MW) Gate-to-Source Voltage Drain Current - Continuous @ TA = 25°C - Continuous @ TA = 100°C - Pulsed (tp ≤ 10 ms) @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TA = 25°C (Note 3) Symbol VDSS VDGR VGS ID ID...