STW200NF03

N-CHANNEL 30V - 0.002 Ω - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET™ II MOSFET TYPE STW200NF03 s s STW200NF03 VDSS 30V RDS(on) <0.0028Ω ID 120A TYPICAL RDS(on) = 0.002 Ω 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is particularly suitable in OR-ing function circuits and synchronous rectification. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s HIGH CURRENT, HIGH SWITCHING SPEED s OR-ING FUNCTION 1 TO-247 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID() ID IDM() Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 30 30 ± 20 120 120 480 350 2.33 1.5 4 -55 to 175 Unit V V V A A A W W/°C V/ns J °C () Pulse width limited by safe operating area. () Current limited by package October 2002 (1) ISD ≤120A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX. (2) Starting T j = 25 oC, ID = 60 A, VDD= 15V 1/8 STW200NF03 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature ...