2N5060

2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO−92/TO-226AA package which is readily adaptable for use in automatic insertion equipment. Features Sensitive Gate Trigger Current − 200 mA Maximum Low Reverse and Forward Blocking Current − 50 mA Maximum, TC = 110°C Low Holding Current − 5 mA Maximum Passivated Surface for Reliability and Uniformity These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz, RGK = 1 kW) 2N5060 2N5061 2N5062 2N5064 VDRM, VRRM 30 60 100 200 V On-State Current RMS (180° Conduction Angles; TC = 80°C) *Average On-State Current (180° Conduction Angles) (TC = 67°C) (TC = 102°C) *Peak Non-repetitive Surge Current, TA = 25°C (1/2 cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) IT(RMS) IT(AV) ITSM I2t 0.8 0.51 0.255 10 0.4 A A A A2s *Average On-State Current (180° Conduction Angles) (TC = 67°C) (TC = 102°C) *Forward Peak Gate Power (Pulse Width v 1.0 msec; TA = 25°C) *Forward Average Gate Power (TA = 25°C, t = 8.3 ms) *Forward Peak Gate Current (Pulse Width v 1.0 msec; TA = 25°C) *Reverse Peak Gate Vo...