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AUTOMOTIVE MOSFET. IRFP1405 Datasheet

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AUTOMOTIVE MOSFET. IRFP1405 Datasheet






IRFP1405 MOSFET. Datasheet pdf. Equivalent






IRFP1405 MOSFET. Datasheet pdf. Equivalent


IRFP1405

Part

IRFP1405

Description

AUTOMOTIVE MOSFET



Feature


PD - 95810 AUTOMOTIVE MOSFET IRFP1405 HEXFET® Power MOSFET D Features ● ● ● ● Advanced Process Techno logy Ultra Low On-Resistance 175°C Ope rating Temperature Fast Switching Repet itive Avalanche Allowed up to Tjmax VD SS = 55V G S RDS(on) = 5.3mΩ ID = 95 A Description Specifically designed fo r Automotive applications, this HEXFET Power MOSFET utilizes the lates.
Manufacture

International Rectifier

Datasheet
Download IRFP1405 Datasheet


International Rectifier IRFP1405

IRFP1405; t processing techniques to achieve extre mely low on-resistance per silicon area . Additional features of this design ar e a 175°C junction operating temperatu re, fast switching speed and improved r epetitive avalanche rating . These feat ures combine to make this design an ext remely efficient and reliable device fo r use in Automotive applications and a wide variety of oth.


International Rectifier IRFP1405

er applications. D G TO-247AC S Absol ute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Si licon Limited) Continuous Drain Current , VGS @ 10V Continuous Drain Current, V GS @ 10V (Package Limited) Pulsed Drain Current Max. 160 110.

Part

IRFP1405

Description

AUTOMOTIVE MOSFET



Feature


PD - 95810 AUTOMOTIVE MOSFET IRFP1405 HEXFET® Power MOSFET D Features ● ● ● ● Advanced Process Techno logy Ultra Low On-Resistance 175°C Ope rating Temperature Fast Switching Repet itive Avalanche Allowed up to Tjmax VD SS = 55V G S RDS(on) = 5.3mΩ ID = 95 A Description Specifically designed fo r Automotive applications, this HEXFET Power MOSFET utilizes the lates.
Manufacture

International Rectifier

Datasheet
Download IRFP1405 Datasheet




 IRFP1405
PD - 95810
AUTOMOTIVE MOSFET
IRFP1405
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 5.3m
ID = 95A
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
S
GD
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC Junction-to-Case *
Rθcs Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient *
Max.
160
110
95
640
310
2.0
± 20
530
1060
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.24
–––
Max.
0.49
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
* Rθ is measured at TJ approximately 90°C
www.irf.com
1
12/22/03




 IRFP1405
IRFP1405
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
eRDS(on)
Static Drain-to-Source On-Resistance ––– 4.2 5.3 mVGS = 10V, ID = 95A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance
77 ––– ––– S VDS = 25V, ID = 95A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 120 180
ID = 95A
Qgs Gate-to-Source Charge
––– 30 ––– nC VDS = 44V
eQgd
Gate-to-Drain ("Miller") Charge
––– 53 –––
VGS = 10V
td(on)
Turn-On Delay Time
––– 12 –––
VDD = 28V
tr Rise Time
––– 160 –––
ID = 95A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 140 –––
––– 150 –––
ens RG = 2.6
VGS = 10V
LD Internal Drain Inductance
––– 5.0 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 13 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 5600 –––
––– 1310 –––
––– 350 –––
––– 6550 –––
––– 920 –––
––– 1750 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 95
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 640
A showing the
integral reverse
––– ––– 1.3
––– 70 110
––– 170 260
ep-n junction diode.
V TJ = 25°C, IS = 95A, VGS = 0V
ens TJ = 25°C, IF = 95A, VDD = 28V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
„ Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as Coss while VDS is rising from 0 to 80% VDSS .
‚ Limited by TJmax, starting TJ = 25°C, L = 0.12mH … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25, IAS = 95A, VGS =10V. Part not
avalanche performance.
recommended for use above this value.
† This value determined from sample failure population. 100%
ƒ Pulse width 1.0ms; duty cycle 2%.
tested to this value in production.
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