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MX29LV320. 29LV320BTC-70 Datasheet

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MX29LV320. 29LV320BTC-70 Datasheet






29LV320BTC-70 MX29LV320. Datasheet pdf. Equivalent




29LV320BTC-70 MX29LV320. Datasheet pdf. Equivalent





Part

29LV320BTC-70

Description

MX29LV320



Feature


MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEA TURES • Low Power Consumption GENERAL FEATURES - Low active read current: 10 mA (typical) at 5MHz • 4,194,304 x 8 / 2,097,152 x 16 switchable - Low stand by current: 200nA (typical) • Sector Structure • Minimum 100,000 erase/pro gram cycle - 8K-Byte x 8 and 64K-Byte x 63 • 10-year data retenti.
Manufacture

ETC

Datasheet
Download 29LV320BTC-70 Datasheet


ETC 29LV320BTC-70

29LV320BTC-70; on • Extra 64K-Byte sector for securit y - Features factory locked and identif iable, and cusSOFTWARE FEATURES tomer l ockable • Erase Suspend/ Erase Resume • Twenty-Four Sector Groups - Suspen ds sector erase operation to read data from - Provides sector group protect fu nction to prevent proor program data to another sector which is not being gram or erase operation in t.


ETC 29LV320BTC-70

he protected sector group erased - Provi des chip unprotect function to allow co de chang• Status Reply ing - Data pol ling & Toggle bits provide detection of pro- Provides temporary sector group u nprotect function gram and erase operat ion completion for code changing in pre viously protected sector groups • Sup port Common Flash Interface (CFI) • S ingle Power Supply Opera.


ETC 29LV320BTC-70

tion - 2.7 to 3.6 volt for read, erase, and program operations HARDWARE FEATURE S • Latch-up protected to 250mA from -1V to Vcc + 1V • Ready/Busy (RY/BY) Output • Low Vcc write inhibit is equ al to or less than 1.4V - Provides a ha rdware method of detecting program www. DataSheet4U.com • Compatible with JED EC standard and erase operation complet ion - Pinout and software .

Part

29LV320BTC-70

Description

MX29LV320



Feature


MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEA TURES • Low Power Consumption GENERAL FEATURES - Low active read current: 10 mA (typical) at 5MHz • 4,194,304 x 8 / 2,097,152 x 16 switchable - Low stand by current: 200nA (typical) • Sector Structure • Minimum 100,000 erase/pro gram cycle - 8K-Byte x 8 and 64K-Byte x 63 • 10-year data retenti.
Manufacture

ETC

Datasheet
Download 29LV320BTC-70 Datasheet




 29LV320BTC-70
MX29LV320T/B
32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE
3V ONLY FLASH MEMORY
FEATURES
GENERAL FEATURES
• Low Power Consumption
• 4,194,304 x 8 / 2,097,152 x 16 switchable
- Low active read current: 10mA (typical) at 5MHz
• Sector Structure
- Low standby current: 200nA (typical)
- 8K-Byte x 8 and 64K-Byte x 63
• Minimum 100,000 erase/program cycle
• Extra 64K-Byte sector for security
• 10-year data retention
- Features factory locked and identifiable, and cus-
tomer lockable
SOFTWARE FEATURES
• Twenty-Four Sector Groups
• Erase Suspend/ Erase Resume
- Provides sector group protect function to prevent pro-
- Suspends sector erase operation to read data from
gram or erase operation in the protected sector group
or program data to another sector which is not being
- Provides chip unprotect function to allow code chang-
erased
ing • Status Reply
- Provides temporary sector group unprotect function
- Data polling & Toggle bits provide detection of pro-
for code changing in previously protected sector groups
gram and erase operation completion
• Single Power Supply Operation
• Support Common Flash Interface (CFI)
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
HARDWARE FEATURES
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Ready/Busy (RY/BY) Output
• Low Vcc write inhibit is equal to or less than 1.4V
- Provides a hardware method of detecting program
• Compatible with JEDEC standard
andwww.DataSheet4U.com erase operation completion
- Pinout and software compatible to single power sup- • Hardware Reset (RESET) Input
ply Flash
- Provides a hardware method to reset the internal state
PERFORMANCE
• High Performance
- Fast access time: 70/90/120ns
machine to read mode
• WP/ACC input pin
- Provides accelerated program capability
- Fast program time: 7us/word typical utilizing acceler-
ate function
- Fast erase time: 1.6s/sector, 112s/chip (typical)
PACKAGE
• 48-Pin TSOP
• 48-Ball CSP
GENERAL DESCRIPTION
The MX29LV320T/B is a 32-mega bit Flash memory or-
ganized as 4M bytes of 8 bits and 2M words of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29LV320T/B is packaged in 48-pin TSOP and
48-ball CSP. It is designed to be reprogrammed and
erased in system or in standard EPROM programmers.
The standard MX29LV320T/B offers access time as fast
as 70ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV320T/B has separate chip enable (CE) and
output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV320T/B uses a command register to manage
this functionality.
MXIC Flash technology reliably stores memory
contents even after 100,000 erase and program
cycles. The MXIC cell is designed to optimize the
erase and program mechanisms. In addition, the
combination of advanced tunnel oxide processing
and low internal electric fields for erase and
programming operations produces reliable cycling.
P/N:PM0742
REV. 1.4, JUL. 04, 2003
1




 29LV320BTC-70
MX29LV320T/B
The MX29LV320T/B uses a 2.7V to 3.6V VCC
supply to perform the High Reliability Erase and
auto Program/Erase algorithms.
The highest degree of latch-up protection is
achieved with MXIC's proprietary non-epi process.
Latch-up protection is proved for stresses up to 100
milliamperes on address and data pin from -1V to
VCC + 1V.
AUTOMATIC PROGRAMMING
The MX29LV320T/B is byte/word programmable using
the Automatic Programming algorithm. The Automatic
Programming algorithm makes the external system do
not need to have time out sequence nor to verify the
data programmed. The typical chip programming time at
room temperature of the MX29LV320T/B is less than 36
seconds.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm require the user
to only write program set-up commands (including 2 un-
lock write cycle and A0H) and a program command (pro-
gram data and address). The device automatically times
the programming pulse width, provides the program veri-
fication, and counts the number of sequences. A status
bit similar to DATA polling and a status bit toggling be-
tween consecutive read cycles, provide feedback to the
user as to the status of the programming operation.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 50 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 50 seconds. The Automatic Erase algorithm
automatically programs the entire array prior to electri-
cal erase. The timing and verification of electrical erase
are controlled internally within the device.
modes allow sectors of the array to be erased in one
erase cycle. The Automatic Sector Erase algorithm
automatically programs the specified sector(s) prior to
electrical erase. The timing and verification of
electrical erase are controlled internally within the
device.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stand-
ard microprocessor write timings. The device will auto-
matically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecu-
tive read cycles provides feedback to the user as to the
status of the programming operation.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming cir-
cuitry. During write cycles, the command register inter-
nally latches address and data needed for the program-
ming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE .
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, relia-
bility, and cost effectiveness. The MX29LV320T/B elec-
trically erases all bits simultaneously using Fowler-Nord-
heim tunneling. The bytes/words are programmed by
using the EPROM programming mechanism of hot elec-
tron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis-
ter to respond to its full command set.
AUTOMATIC SECTOR ERASE
The MX29LV320T/B is sector(s) erasable using
MXIC's Auto Sector Erase algorithm. Sector erase
P/N:PM0742
2
REV. 1.4, JUL. 04, 2003




 29LV320BTC-70
MX29LV320T/B
PIN CONFIGURATION
48 TSOP
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE
RESET
NC
WP/ACC
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
MX29LV320T/B
48 A16
47 BYTE
46 GND
45 Q15/A-1
44 Q7
43 Q14
42 Q6
41 Q13
40 Q5
39 Q12
38 Q4
37 VCC
36 Q11
35 Q3
34 Q10
33 Q2
32 Q9
31 Q1
30 Q8
29 Q0
28 OE
27 GND
26 CE
25 A0
48-Ball CSP 8mm x 9mm (Ball Pitch = 0.8 mm), Top View, Balls Facing Down
A BC D E F G H
6 A13 A12
A14 A15 A16 BYTE Q15/A-1 GND
5 A9 A8
A10 A11 Q7
Q14 Q13 Q6
4 WE RESET NC A19 Q5
Q12 Vcc Q4
3 RY/BY WP/ACC A18 A20 Q2
Q10 Q11 Q3
2 A7 A17
A6 A5 Q0 Q8 Q9 Q1
1 A3 A4
A2 A1 A0 CE OE GND
PIN DESCRIPTION
SYMBOL
PIN NAME
A0~A20
Address Input
Q0~Q14
15 Data Inputs/Outputs
Q15/A-1
Q15(Data Input/Output, word mode)
A-1(LSB Address Input, byte mode)
CE Chip Enable Input
WE Write Enable Input
OE Output Enable Input
BYTE
Word/Byte Selection Input
RESET
Hardware Reset Pin, Active Low
RY/BY
Read/Busy Output
VCC
3.0 volt-only single power supply
WP/ACC
Hardware Write Protect/Acceleration
Pin
GND
Device Ground
NC Pin Not Connected Internally
LOGIC SYMBOL
21
A0-A20
CE
OE
WE
RESET
BYTE
WP/ACC
P/N:PM0742
3
Q0-Q15
(A-1)
16 or 8
RY/BY
REV. 1.4, JUL. 04, 2003



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