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STP5NB90 Dataheets PDF



Part Number STP5NB90
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N - CHANNEL PowerMESH MOSFET
Datasheet STP5NB90 DatasheetSTP5NB90 Datasheet (PDF)

STP5NB90 STP5NB90FP N - CHANNEL 900V - 2.3 Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET PRELIMINARY DATA TYPE ST P5NB90 ST P5NB90FP s s s s s V DSS 900 V 900 V R DS(on) < 2.5 Ω < 2.5 Ω ID 5 A 5 A TYPICAL RDS(on) = 2.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding perform.

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STP5NB90 STP5NB90FP N - CHANNEL 900V - 2.3 Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET PRELIMINARY DATA TYPE ST P5NB90 ST P5NB90FP s s s s s V DSS 900 V 900 V R DS(on) < 2.5 Ω < 2.5 Ω ID 5 A 5 A TYPICAL RDS(on) = 2.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY(UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1 ) V ISO Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM Value STP5NB90 STP5NB90F P 900 900 ± 30 5 3.1 20 125 1.0 4.5  -65 to 150 150 ( 1) ISD ≤5 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V 5(*) 3.1(*) 20 40 0.32 4.5 2000 A A A W W /o C V/ns V o o C C (•) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed September 1998 1/6 STP5NB90/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 1 62.5 0.5 300 TO220-FP 3.13 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) Max Valu e 5 318 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 900 1 50 ± 100 T yp. Max. Unit V µA µA nA V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 30 V T c = 125 C o ON (∗) Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Test Con ditions ID = 250 µ A ID = 2.5 A 5 Min. 3 T yp. 4 2.3 Max. 5 2.5 Unit V Ω A Static Drain-source O n V GS = 10V Resistance On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s (∗ ) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D = 2.5 A V GS = 0 Min. 2.5 T yp. 4.1 1250 128 13 1625 170 20 Max. Unit S pF pF pF 2/6 STP5NB90/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 450 V R G = 4.7 Ω V DD =720 V ID = 2.5 A VGS = 10 V ID =5 A V GS = 10 V Min. T yp. 18 9 33 10 13 Max. 26 13 47 Unit ns ns nC nC nC SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Con ditions V DD = 720 V ID =5 A R G = 4.7 Ω V GS = 10 V Min. T yp. 13 10 17 Max. 18 14 24 Unit ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 5 A V GS = 0 700 5.4 16 I SD = 5 A di/dt = 100 A/ µ s T j = 150 o C V DD = 100 V Test Con ditions Min. T yp. Max. 5 20 1.6 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STP5NB90/FP TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 A C D1 L2 F1 D G1 Dia. F2 F L5 L7 L6 L9 L4 G 4/6 H2 P011C STP5NB90/FP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9..


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