F-MOS FET. 2SK1611 Datasheet

2SK1611 FET. Datasheet pdf. Equivalent


Part 2SK1611
Description Silicon N-Channel Power F-MOS FET
Feature Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capac.
Manufacture Panasonic Semiconductor
Datasheet
Download 2SK1611 Datasheet


Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET 2SK1611 Datasheet
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current 2SK1611 Datasheet
Recommendation Recommendation Datasheet 2SK1611 Datasheet




2SK1611
Power F-MOS FETs
2SK1611
Silicon N-Channel Power F-MOS FET
s Features
q High avalanche energy capacity
q VGSS: 30V guaranteed
q Low RDS(on), high-speed switching characteristic
s Applications
q High-speed switching (switching power supply, AC adaptor)
q For high-frequency power amplification
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage VDSS 800 V
Gate to Source voltage
VGSS
±30
V
Drain current
DC
Pulse
ID
IDP
±3 A
±6 A
Avalanche energy capacity
EAS*
20
mJ
Allowable power
dissipation
TC = 25°C
PD
Ta = 25°C
50
W
2
Channel temperature
Storage temperature
* Single pulse
Tch 150 °C
Tstg
55 to +150
°C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Avalanche energy capacity
IDSS
IGSS
VDSS
EAS*
Gate threshold voltage
Vth
Drain to Source ON-resistance RDS(on)
Forward transfer admittance
| Yfs |
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton
Fall time
tf
Turn-off time (delay time)
td(off)
* Avalanche energy capacity test circuit
VDS = 640V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
L = 4.5mH, ID = 3A, VDD = 50V
VDS = 25V, ID = 1mA
VGS = 10V, ID = 2A
VDS = 25V, ID = 2A
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 2A
VDD = 200V, RL = 100
PVS
L
ID
Gate
RGS
VDS
Drain
Source
C VDD
10.0±0.2
5.5±0.2
unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.5 +0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
123
1: Gate
2: Drain
3: Source
EIAJ: SC-67
TO-220 Full Pack Package (a)
min typ max Unit
0.1 mA
±1 µA
800 V
20 mJ
1 5V
3.2 4
1.5 2.4
S
730 pF
90 pF
40 pF
40 ns
35 ns
105 ns
1



2SK1611
Power F-MOS FETs
ID VDS
6
5 VGS=15V 10V
7V
4
TC=25˚C
6V
3
2
5V
1 50W
4V
0
0 10 20 30 40 50 60
Drain to source voltage VDS (V)
ID VGS
6
VDS=25V
TC=25V
5
4
3
2
1
0
0 2 4 6 8 10
Gate to source voltage VGS (V)
PD Ta
60
(1) TC=Ta
(2) Without heat sink
50 (PD=2W)
40
(1)
30
20
10
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
| Yfs | ID
3.2
VDS=25V
2.8 TC=25˚C
2.4
2.0
1.6
1.2
0.8
0.4
0
0123456
Drain current ID (A)
Ciss, Coss, Crss VDS
10000
TC=25˚C
3000
1000
300
Ciss
100
Coss
30
Crss
10
0 40 80 120 160 200 240
Drain to source voltage VDS (V)
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 IDP
3 ID
1
DC
t=1ms
0.3
10ms
0.1
0.03
0.01
1 3 10 30 100 300 1000
Drain to source voltage VDS (V)
2SK1611
RDS(on) ID
10
TC=25˚C
8
6
4
VGS=10V
15V
2
0
0123456
Drain current ID (A)
ton, tf, td(off) ID
160
VDD=200V
140 VGS=10V
TC=25˚C
120
100
td(off)
80
60
ton
40
tf
20
0
0123456
Drain current ID (A)
EAS Tj
30
ID=3A
VDD=50V
25
20
15
10
5
0
25 50 75 100 125 150 175
Junction temperature Tj (˚C)
2







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