STN4NF03L
N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET™ II POWER MOSFET
TYPE STN4NF03L
s s
VDSS 30V
RDS(on) <0.05Ω
...
STN4NF03L
N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET™ II POWER MOSFET
TYPE STN4NF03L
s s
VDSS 30V
RDS(on) <0.05Ω
ID 6.5A
2
TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE
1
2
3
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™ ” stripbased process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s DC-DC & DC-AC CONVERTERS s DC MOTOR CONTROL (DISK DRIVES, etc.) s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 30 30 ±16 6.5 4.5 26 3.3 0.026 200 –55 to 175
(1) Starting Tj=25°C, ID=6.5A, VDD=15V
Unit V V V A A A W W/°C mJ °C
(q ) Pulse width limited by safe operating area
December 2002
1/8
STN4NF03L
THERMAL DATA
Rthj-PCB Rthj-PCB Tl Thermal Resistance Junction-PC Board Max (*) Thermal Resistance Junction-PCB Max (**) Maximum Lead Temperature For Soldering Purpose (1.6 mm from case for 10s)
2
38 100 260
°C/W °C/W °C
No...