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STN4NF03L

ST Microelectronics

N-CHANNEL POWER MOSFET

STN4NF03L N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET™ II POWER MOSFET TYPE STN4NF03L s s VDSS 30V RDS(on) <0.05Ω ...


ST Microelectronics

STN4NF03L

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STN4NF03L N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET™ II POWER MOSFET TYPE STN4NF03L s s VDSS 30V RDS(on) <0.05Ω ID 6.5A 2 TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE 1 2 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™ ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SOT-223 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC-DC & DC-AC CONVERTERS s DC MOTOR CONTROL (DISK DRIVES, etc.) s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 30 30 ±16 6.5 4.5 26 3.3 0.026 200 –55 to 175 (1) Starting Tj=25°C, ID=6.5A, VDD=15V Unit V V V A A A W W/°C mJ °C (q ) Pulse width limited by safe operating area December 2002 1/8 STN4NF03L THERMAL DATA Rthj-PCB Rthj-PCB Tl Thermal Resistance Junction-PC Board Max (*) Thermal Resistance Junction-PCB Max (**) Maximum Lead Temperature For Soldering Purpose (1.6 mm from case for 10s) 2 38 100 260 °C/W °C/W °C No...




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