STN4NE03L

® STN4NE03L N - CHANNEL 30V - 0.037Ω - 4A - SOT-223 STripFET™ POWER MOSFET TYPE ST N4NE03L s s s s s V DSS 30 V R DS(on) < 0.05 Ω ID 4 A TYPICAL RDS(on) = 0.037 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 2 3 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC MOTOR CONTROL (DISK DRIVES, etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION s POWER MANAGEMENT IN BATTERY-OPERATED AND PORTABLE EQUIPMENT s 1 SOT-223 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS I D(*) I D(*) I DM ( ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor dv/dt ( 1) T stg Tj Peak Diode Recovery voltage slope St orage Temperature Max. Operating Junction Temperature (*) Limited by package o o Value 30 30 ± 15 4 2.5 16 2.5 0.02 6 -65 to 150 150 Uni t V V V A A A W W/ C V/ ns o o o C C () Pulse width limited by safe operating area (1)ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DS...