STS25NH3LL

N-CHANNEL 30V - 0.0032 Ω - 25A SO-8 STripFET™ III MOSFET FOR DC-DC CONVERSION TYPE STS25NH3LL s s s s STS25NH3LL VDSS 30 V RDS(on) <0.0035 Ω ID 25 A TYPICAL RDS(on) = 0.0032 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED DESCRIPTION The STS25NH3LL utilizes the latest advanced design rules of ST's propetary STripFET™ technology. This novel 0.6µ process coupled to unique metalization techniques re alizes the most advanced low voltage MOSFET in SO-8 ever produced. It is therefore suit able for the most demanding DC-DC converter applications where high efficiency is to be achived at high output current. SO-8 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC-DC CONVERTERS FOR TELECOM AND NOTEBOOK CPU CORE s SYNCHRONOUS RECTIFIER ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() EAS (1) Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Single Pulse Avalanche Energy Total Dissipation at TC = 25°C Value 30 30 ± 18 25 18 100 200 3.2 (1) Starting Tj = 25 oC Unit V V V A A A mJ W VDD = 30V () Pulse width limited by safe operating area. September 2003 . ID = 12.5A 1/8 STS25NH3LL THERMAL DATA Rthj-amb Rthj-lead Tj Tstg (*)Thermal Resistance Junction-ambient Thermal Resistance Junction-leads Maximum Operating Junction Temperature Storage Temperature [ Max Max 47 16 -55...