N-Channel Enhancement Mode Field Effect Transistor
Description
S amHop Microelectronics C orp.
S T S 2336A
Dec 26 2004
N-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m W ) Max
ID
3A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
60@ V G S = 4.5V 120@ V G S =2.5V
R ugged and reliable. S OT-23 package.
D
S OT-23
D S G
G
S
AB S OL UTE MAXIMUM...
