STS2320

SamHop Microelectronics Corp. STS2320 Oct .29 2004 V1.1 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 20V FEATURES ( m W ) Max ID 3.6A RDS(ON) Super high dense cell design for low RDS(ON). 45@ VGS = 4.5V 65@ VGS =2.5V Rugged and reliable. SOT-23 package. D SOT-23 D S G G S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range a Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 10 3.6 14 1.25 1.25 -55 to 150 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a RthJA 100 C/W 1 STS2320 ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS CISS COSS CRSS c Symbol Condition VGS = 0V, ID = 250uA VDS = 16V, VGS = 0V VGS = 10V, VDS =0V VDS = VGS, ID = 250uA VGS = 4.5V, ID= 3A VGS = 2.5V, ID= 2A VDS = 5V, VGS = 4.5V VDS = 5V, ID =3A Min Typ C Max Unit 20 1 100 0.6 0.9 32 50 10 8 641 135 101 1.5 45 65 V uA nA V m-ohm m-ohm ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHARACTERISTICS c Input Capacitance Output Capacitance Reverse Transfer Capac...