STS2NF100

N-CHANNEL 100V - 0.23 Ω - 6A SO-8 STripFET™ II POWER MOSFET TYPE STS2NF100 s s s s STS2NF100 VDSS 100 V RDS(on) <0.26 Ω ID 6A TYPICAL RDS(on) = 0.23 Ω EXCEPTIONAL dv/dt CAPABILITY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. SO-8 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID() ID IDM() Ptot dV/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 20 2 1.3 8 2.5 0.016 40 200 -65 to 175 (1) ISD ≤2A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX (2) Starting T j = 25 oC, ID = 3A, VDD = 50V Unit V V V A A A W W/°C V/ns mJ °C () Pulse width limited by safe operating area. () Current limited by the package October 2002 . ...