STS2DPFS20V

P-CHANNEL 20V - 0.14 Ω - 2.5A SO-8 2.7V-DRIVE STripFET™ II MOSFET PLUS SCHOTTKY DIODE MAIN PRODUCT CHARACTERISTICS MOSFET VDSS 20 V SCHOTTKY IF(AV) 3A RDS(on) < 0.20Ω (@4.5V) < 0.25Ω (@2.7V) VRRM 30 V ID 2.5 A VF(MAX) 0.51 V STS2DPFS20V DESCRIPTION This product associates the latest low voltage StripFETœ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. SO-8 INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot Parameter Dain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kW) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 20 20 ± 12 2.5 1.58 10 2 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM Parameter Value Unit Repetitive Peak Reverse Voltage RMS Forward Curren Average Forward Current Surge Non Repetitive Forward Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage TL=125 oC δ =0.5 tp= 10 ms Sinusoidal tp=100 µs 30 20 3 75 1 10000 V A A A A V/µs IF(RMS) IF(AV) IFSM IRSM dv/dt () Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed November 2002 . 1/8 STS2DPFS20V TERMAL DATA Rthj-amb Rthj-amb Tstg Tj (*)Thermal (*)Therma...