(UPD23C16340 / UPD23C16380) 16M-BIT MASK-PROGRAMMABLE ROM
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD23C16340, 23C16380
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1...
Description
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD23C16340, 23C16380
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
Description
The µPD23C16340 and µPD23C16380 are 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 2,097,152 words by 8 bits, WORD mode : 1,048,576 words by 16 bits). The active levels of OE (Output Enable Input) can be selected with mask-option. The µPD23C16340 and µPD23C16380 are packed in 48-pin PLASTIC TSOP(I) and 48-pin TAPE FBGA.
Features
Pin compatible with NOR Flash Memory Word organization 2,097,152 words by 8 bits (BYTE mode) 1,048,576 words by 16 bits (WORD mode) Page access mode BYTE mode : 8 byte random page access (µPD23C16340) 16 byte random page access (µPD23C16380) WORD mode : 4 word random page access (µPD23C16340) 8 word random page access (µPD23C16380) Operating supply voltage : VCC = 2.7 V to 3.6 V
Operating supply voltage VCC 3.0 V ± 0.3 V 3.3 V ± 0.3 V Access time / Page access time ns (MAX.) 90 / 25 85 / 25 Power supply current (Active mode) mA (MAX.) Standby current (CMOS level input)
µPD23C16340
40
µPD23C16380
55
µA (MAX.)
30
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Docume...
Similar Datasheet