IS28F020

IS28F020 IS28F020 262,144 x 8 CMOS FLASH MEMORY ISISSSII®® FEBRUARY 1997 FEATURES High performance - 50 ns maximum access time CMOS low power consumption - 30 mA maximum active current - 100 µA maximum standby current Compatible with JEDEC-standard byte-wide pinouts - 32-pin DIP - 32-pin PLCC - 32-pin TSOP Program and erase voltage 12.0V ± 5% Maximum latch-up immunity through advanced CMOS process BLOCK DIAGRAM Flash electrical bulk chip-erase - One second typical chip-erase Fast-pulse programming algorithm - 10 µs (typical) byte-program - 4 second chip-program Command register architecture for microprocessor/microcontroller compatible write interface On-chip address and data latches for programming Advanced CMOS flash memory technology - Low cost single transistor memory cell Integrated program/erase stop timer DQ7-D0 VCC GND VPP WE OE CE STATE CONTROL COMMAND REGISTER INTEGRATED STOP TIMER ERASE VOLTAGE SWITCH TO ARRAY PROGRAM V...