Document
IGBT MODU ODULE
MBM300GS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
C2E1
G2 E2 E2 C1 E1 G1
Weight: 540(g)
TERMINALS
ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item
Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current
Symbol
VCES VGES IC ICp IF IFM Pc Tj Tstg VISO -
Unit
V V A A W °C °C VRMS N.m (kgf.cm)
MBM300GS12AW
1,200 ±20 300 600 300 600 1,700 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 2.94(30) 2.94(30)
DC 1ms DC 1ms
(1)
Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting
(2) (3)
Notes:(1)RMS Current of Diode 90Arms max. (2)(3)Recommended Value 2.45N.m(25kgf.cm)
CHARACTERISTICS Item
(Tc=25°C ) Symbol Unit Min. Typ. Max. Test Conditions
Collector Emitter Cut-Off Current I CES mA 1.0 VCE=1,200V,VGE=0V Gate Emitter Leakage Current IGES nA ±500 VGE=±20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 2.7 3.4 IC=300A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =300mA Input Capacitance Cies pF 28,000 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.25 0.5 VCC=600V ms Turn On Time ton 0.4 0.7 RL=2.0W Switching Times Fall Time tf 0.25 0.35 RG=4.3W (4) 0.75 1.1 VGE=±15V Turn Off Time toff Peak Forward Voltage Drop VFM V 2.5 3.5 IF=300A,VGE=0V Reverse Recovery Time trr 0.35 IF=300A,VGE=-10V, di/dt=400A/ms ms Junction to case Rth(j-c) °C/W 0.073 Thermal Impedance IGBT 0.2 FWD Rth(j-c) Notes:(4) RG value is the test condition’s value for decision of the switching times, not recommended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted.
PDE-M300GS12AW-0
600
14V VGE=15V 13V12V Tc=25°C
TYPICAL
600
14V VGE=15V 13V12V Tc=125°C
TYPICAL
500
500 11V
Collector Current, Ic (A)
Collector Current, Ic (A)
11V 400
400
300
Pc=1700W
300 10V 200
200 10V 100 9V 0
100
9V
0 0 2 4 6 8 10
0
2
4
6
8
10
Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage
TYPICAL 10 Tc=25°C
Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage
TYPICAL 10 Tc=125°C
Collector to Emitter Voltage, VCE (V)
Collector to Emitter Voltage, VCE (V)
8
8
6
6
4
Ic=600A Ic=300A
4
Ic=600A Ic=300A
2
2
0
0 0 5 10 15 20 0 5 10 15 20
Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage
Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage
TYPICAL 600 VGE=0 Tc=25°C Tc=125°C
TYPICAL 20 Vcc=600V Ic =300A Tc=25°C
500
Gate to Emitter Voltage, VGE (V)
15
Forward Current, IF (A)
400
10
300
200
5 100
0
0 0 500 1000 1500 2000 2500 0 1 2 3 4 5
Gate Charge, QG (nc) Gate charge characteristics
Forward Voltage, VF (V) Forward voltage of free-wheeling diode
PDE-M300GS12AW-0
TYPICAL 1.5
Vcc=600V VGE=±15V RG=4.3W TC=25°C Resistive Load
TYPICAL 10 VCC=600V VGE=±15V IC=300A TC=25°C Resistive Load toff
Switching Time, t (ms)
1
Switching Time, t (ms)
toff
1
ton
0.5 ton tf tr 0 0 100 200 300 400
tr tf
0.1
1
10
100
Collector Current, IC (A) Switching time vs. Collector current
TYPICAL 60 Vcc=600V VGE=±15V RG=4.3W TC=125°C Inductive Load 100 Etoff
Gate Resistance, RG (W) Switching time vs. Gate resistance
TYPICAL Etoff
Switching Loss, Eton,Etoff, Err (mJ/pulse)
50
Switching Loss, Eton, Etoff (mJ/pulse)
40
Eton
30
Err 10
Eton
20 Err 10
VCC=600V VGE=±15V IC =300A TC=125°C Inductive Load 1 1 10 100
0 0 100 200 300 400
Collector Current, IC (A) Switching loss vs. Collector current
Gate Resistance, RG (W) Switching loss vs. Gate resistance
1000 VGE=±15V RG=4.3W TC£125°C
1
Transient Thermal Impedance, Rth(j-c) (°C/W)
Collector Current, Ic (A)
100
Diode IGBT
0.1
10
0.01
1
0.1 0 200 400 600 800 1000 1200 1400
0.001 0.001
0.01
0.1
1
10
Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area
Time, t (s) Transient thermal impedance
PDE-M300GS12AW-0
HITACHI POWER SEMICONDUCTORS Notices
1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. Or consult Hitac.