MSA-1120

Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1120 Features High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block 3 dB Bandwidth: 50 MHz to 1.6 GHz 17.5 dBm Typical P1 dB at 0.5 GHz 12 dB Typical 50 Ω Gain at 0.5 GHz 3.5 dB Typical Noise Figure at 0.5 GHz Hermetic Metal/Beryllia Microstrip Package disk package for good thermal characteristics. This MMIC is designed for high dynamic range in either 50 or 75 Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 200 mil BeO Package Description The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic BeO Typical Biasing Configuration R bias VCC > 8 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.5 V 2 2 MSA-1120 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 100 mA 650 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 60°C/W Notes: 1. Permanent damage may occur if any of thes...