TC58FVB160A

TC58FVT160/B160AFT/AXB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT (2M × 8 BITS / 1M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT160/B160A is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 2,097,152 words × 8 bits or as 1,048,576 words × 16 bits. The TC58FVT160/B160A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. FEATURES Power supply voltage VDD = 2.7 V~3.6 V Operating temperature Ta = −40°C~85°C Organization 2M × 8 bits / 1M × 16 bits Functions Auto Program, Auto Erase Fast Program Mode Program Suspend/Resume Erase Suspend/Resume data polling / Toggle bit block protection Automatic Sleep, support for hidden ROM area common flash memory interface (CFI) Byte/Word Modes Block erase architecture 1 × 16 Kbytes / 2 × 8 Kbytes 1 × 32 Kbytes / 31 × 64 Kbytes Boot block architecture TC58FVT160AFT/AXB: top boot block TC58FVB160AFT/AXB: bottom boot block Mode control Compatible with JEDEC standard commands Erase/Program cycles 105 cycles typ. Access time 70 ns (CL: 30 pF) 100 ns (CL: 100 pF) Power consumption 5 µA (Standby) 30 mA (Read operation) 15 mA (Program/Erase operations) Package TC58FVT160/B160AFT: TSOPI48-P-1220-0.50 (weight: 0.51 g) TC58FVT160/B160AXB: P-TFBGA48-0608-0.80AZ (weight: 0.090 g) ...