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HZ30L

Renesas Technology

Silicon Epitaxial Planar Zener Diode for Low Noise Application

HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0182-0200Z (Previous: ADE-208-118A) Rev...


Renesas Technology

HZ30L

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HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0182-0200Z (Previous: ADE-208-118A) Rev.2.00 Mar.11.2004 Features Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 5.2V through 38 V of zener voltage provide flexible application. Ordering Information Type No. HZ-L Series Mark Type No. Package Code DO-35 Pin Arrangement 1 2 Body color is orange Type No. Cathode band 1. Cathode 2. Anode 7 B2 Rev.2.00, Mar.11.2004, page 1 of 5 HZ-L Series Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 400 175 −55 to +175 Unit mW °C °C Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V)* Type HZ6L Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 HZ7L A1 A2 A3 B1 B2 B3 C1 C2 HZ9L C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZ11L A1 A2 A3 B1 B2 B3 Note: Min 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.5 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.2 10.4 10.7 1 Reverse Current Test Condition IR (µA) Max 1 Test Condition VR (V) 2.0 Dynamic Resistance rd (Ω) Max 150 Test Condition IZ (mA) 0.5 Max 5.5 5.6 5.7 5.8 5.9 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.6 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.6 10.8 11.1 IZ (mA) 0.5 80 0.5 60 0.5 0.5 1 3.5 60 0.5 0.5 ...




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