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TA7376P

Toshiba Semiconductor

AUDIO POWER AMPLIFIER

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA7376P Audio Power Amplifier TA7376P The TA7376P is dual...


Toshiba Semiconductor

TA7376P

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Description
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA7376P Audio Power Amplifier TA7376P The TA7376P is dual audio power amplifier for portable products. Features · Low operating supply voltage: VCC = 1.8~6V (Ta = 25°C) · Low quiescent current: ICCQ = 5.3mA (VCC = 4.5V) · Including ripple filter circuit: RR = −42dB (CRIP = 10µF, fr = 100Hz) · Voltage gain: GV = 39.5dB (typ.) · Very few external parts and small package. (SIP−9pin) Weight: 0.92g (typ.) Output Power Table (THD = 10%, f = 1kHz, Stereo, Typ. value) VCC 3V 4.5V 6V Load RL = 32Ω 21mW 56mW 120mW RL = 16Ω 38mW 100mW 230mW RL = 8Ω 65mW 180mW 400mW RL = 4Ω 100mW 300mW ― Block Diagram Vin 1 Vin 2 IN1 1 2 NF1 IN2 9 8 NF2 VCC 4 RF RF 7 CH - 1 OUT1 3 GND 5 CH - 2 OUT2 6 VCC RL RL 1 2002-10-30 TA7376P Application Note 1. Input stage The input stage of power amplifier (equivalent circuit) is comprised of a PNP differential pair (Q2 and Q3) preceded by a PNP emitter follower (Q1) which allows DC referencing of the source signal to ground. This eliminates the need for an input coupling condenser. However, in case the brush noise of volume becomes a problem, provide serially a coupling condenser to the input side. 2. Adjustment of voltage gain The voltage gain is fixed at GV≒40dB by the resistors (R1 and R2) in IC, however, its reduction is possible through adding Rf as shown in Fig.2. In this case, the voltage gain is obtained by the following equation. GV ≒ 20log R1 + R2 + R1 + Rf Rf It...




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