HiPerRF Power MOSFETs F-Class: MegaHertz Switching
Advanced Technical Information
HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanch...
Description
Advanced Technical Information
HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFH 12N50F VDSS IXFT 12N50F ID25 RDS(on)
= 500 V = 12 A = 0.4 W
trr £ 250 ns
TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 TO-247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 12 48 12 20 300 5 180 -55 ... +150 150 -55 ... +150 300 V V V V A A A
G (TAB)
TO-268 (IXFT) Case Style
mJ mJ V/ns W °C °C °C °C
G = Gate, S = Source,
(TAB) S D = Drain, TAB = Drain
0.4/6 Nm/lb.in. 6 4 g g
Features l RF capable MOSFETs l Double metal process for low gate resistance l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC choppers l 13.5 MHz industrial applications l Pulse generation l Laser drivers l RF amplifiers Advantages Space savings l High power density
l
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless o...
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