MPS3563

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document MPS918/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS918* MPS3563 *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPS918 15 30 3.0 50 350 2.8 0.85 6.8 – 55 to +150 MPS3563 12 30 2.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 357 147 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(2) (IC = 3.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CEO MPS918 MPS3563 V(BR)CBO MPS918 MPS3563 V(BR)EBO MPS918 MPS3563 ICBO MPS918 MPS3563 — — 10 50 3.0 2.0 — — nAdc 30 30 — — Vdc 15 12 — — Vdc Vdc 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 1.0%. v v Prefe...