EMS1 Transistors Datasheet

EMS1 Datasheet PDF, Equivalent


Part Number

EMS1

Description

Emitter Common Dual Digital Transistors

Manufacture

Rohm

Total Page 3 Pages
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EMS1
Transistors
EMS1 / UMS1N / FMS1A
Emitter common (dual digital transistors)
EMS1 / UMS1N / FMS1A
zFeatures
1) Two 2SA1037AK chips in a EMT or UMT or SMT
package.
2) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
PNP silicon transistor
The following characteristics apply to both Tr1 and Tr2.
zEquivalent circuit
EMS1 / UMS1N
(3) (2) (1)
Tr2 Tr1
(4) (5)
FMS1A
(3) (4)
Tr2
(5)
R1
Tr1
(2) (1)
zExternal dimensions (Units : mm)
EMS1
(4) (3)
(2)
(5) (1)
1.2
1.6
Each lead has same dimensions
ROHM : EMT5
Abbreviated symbol : S1
UMS1N
1.25
2.1
0.1Min.
Each lead has same dimensions
ROHM : UMT5
EIAJ : SC-88A
Abbreviated symbol : S1
FMS1A
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
60
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
6
Collector current
IC 150
Collector EMS1, UMS1N
150 (TOTAL)
power
PC
dissipation FMS1A
300 (TOTAL)
Junction temperature
Tj 150
Storage temperature
Tstg
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
55∼+150
Unit
V
V
V
mA
1
mW
2
˚C
˚C
www.datasheet4u.com
1.6
2.8
0.3to0.6
Each lead has same dimensions
ROHM : SMT5
EIAJ : SC-74A
Abbreviated symbol : S1

EMS1
Transistors
EMS1 / UMS1N / FMS1A
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 60 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 6 − − V IE=50µA
Collector cutoff current
ICBO − − −0.1 µA VCB=60V
Emitter cutoff current
IEBO − − −0.1 µA VEB=5V
Collector-emitter saturation voltage VCE (sat) − − −0.5 V IC/IB=50mA/5mA
DC current transfer ratio
hFE 120 560 VCE=6V, IC=1mA
Transition frequency
fT 140 MHz VCE=12V, IE=2mA, f=100MHz
Output capacitance
Cob 3 4.5 PF VCB=12V, IE=0A, f=1MHz
zPackaging specifications
Package
Code
Type
EMS1
UMS1N
FMS1A
Basic ordering
unit (pieces)
T2R
8000
Taping
TR
T148
3000
3000
zElectrical characteristic curves
50
Ta=100˚C
20 25˚C
40˚C
10
5
VCE=6V
2
1
0.5
0.2
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
10
Ta=25˚C
35.0
31.5
8 28.0
24.5
6 21.0
17.5
4 14.0
10.5
2 7.0
3.5µA
IB=0
0 0.4 0.8 1.2 1.6 2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( I )
100
Ta=25˚C
500
80 450
400
350
300
60
250
200
40 150
100
20
50µA
IB=0
0 1 2 3 4 5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( II )


Features EMS1 / UMS1N / FMS1A Transistors Emitte r common (dual digital transistors) EMS 1 / UMS1N / FMS1A zFeatures 1) Two 2SA1 037AK chips in a EMT or UMT or SMT pack age. 2) Mounting cost and area can be c ut in half. zExternal dimensions (Units : mm) EMS1 0.22 (4) (3) (2) (5) 0.13 1.2 1.6 (1) zStructure Epitaxial pla nar type PNP silicon transistor Each l ead has same dimensions ROHM : EMT5 Ab breviated symbol : S1 UMS1N 0.65 0.65 The following characteristics apply to both Tr1 and Tr2. 0.2 (4) (3) 0.5 1 .3 1.1 2.9 0.9 (5) 0.5 0.5 1.0 1.6 0.8 0.95 0.95 1.9 0.7 2.0 1.25 0.15 zEq uivalent circuit EMS1 / UMS1N (3) Tr2 ( 4) (5) (2) (1) Tr1 Tr2 (2) 2.1 FMS1A (3) (4) (5) R1 Tr1 (1) 0.1Min. 0to0.1 Each lead has same dimensions ROHM : UMT5 EIAJ : SC-88A Abbreviated symbol : S1 FMS1A 0.3 (2) (3) zAbsolute maxi mum ratings (Ta = 25°C) Collector-base voltage Collector-emitter voltage Emit ter-base voltage Collector current Coll ector EMS1, UMS1N power dissipation FMS1A Junction temperature S.
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