STP200NF03

N-CHANNEL 30V - 0.0032 Ω - 120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET TYPE STB200NF03/-1 STP200NF03 s s s STP200NF03 STB200NF03 STB200NF03-1 AUTOMOTIVE SPECIFIC VDSS 30 V 30 V RDS(on) <0.0036 Ω <0.0036 Ω ID 120 A(**) 120 A(**) 3 1 TYPICAL RDS(on) = 0.0032Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED 3 12 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS D²PAK TO-263 I²PAK TO-262 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STB200NF03T4 STP200NF03 STB200NF03-1 MARKING B200NF03 P200NF03 B200NF03 PACKAGE D2PAK TO-220 I2PAK PACKAGING TAPE & REEL TUBE TUBE ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) VDGR VGS Gate- source Voltage Drain Current (continuous) at TC = 25°C ID(**) Drain Current (continuous) at TC = 100°C ID IDM() Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope dv/dt (1) EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Operating Junction Temperature () Pulse width limited by safe operating area. ...