STP20N10L STP20N10LFI
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
TYPE STP20N10L STP20N10LFI
s s s s...
STP20N10L STP20N10LFI
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS
TRANSISTOR
TYPE STP20N10L STP20N10LFI
s s s s s s s s s
V DSS 100 V 100 V
R DS( on) < 0.12 Ω < 0.12 Ω
ID 20 A 12 A
TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE LOGIC LEVEL COMPATIBLE INPUT APPLICATION ORIENTED CHARACTERIZATION
3 1 2 1 2
3
TO-220
ISOWATT220
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s
REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter STP20N10L VD S V DG R V GS ID ID ID M( ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value STP20N10LFI 100 100 ± 15 20 14 80 105 0.7 -65 to 175 175 12 8 80 40 0.27 2000
Unit
V V V A A A W W/o C V
o o
C C
() Pulse width limited by safe operating area
November 1996
1/10
STP20N10L/FI
THERMAL DATA
TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.43 62.5 0.5 300 ISOWATT220 3...