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STP20NE06L STP20NE06LFP
N - CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP STripFET™ POWER MOSFET
TYPE STP20NE06L STP20NE06LF P
s s s s s
V DSS 60 V 60 V
R DS( on ) < 0.07 Ω < 0.07 Ω
ID 20 A 13 A
TYPICAL RDS(on) = 0.06 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION
1
3 2
1 2
3
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Value STP20NE06 V DS V DGR V GS ID ID I DM ( • ) P tot V ISO dv/dt T s tg Tj April 1999 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junct ion T emperature
o o o
Unit
ST P20NE06F P 60 60 ± 20 V V V 13 9 80 30 0.2 2000 7 A A A W W /o C V V/ns
o o
20 14 80 70 0.47 -65 to 175 175
C C 1/9
(•) Pulse width limited by safe operating area
( 1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
STP20NE06L/FP
THERMAL DATA
TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 2.14 62.5 0.5 300 TO-220FP 5
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 35 V) Max Value 20 100 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 60 1 10 ± 100 Typ. Max. Unit V µA µA nA
V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V
T c = 125 oC
ON (∗)
Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 5 V V GS = 10 V Test Con ditions ID = 250 µ A I D = 10 A ID = 10 A 20 Min. 1 Typ. 1.7 0.07 0.06 Max. 2.0 0.085 0.07 Unit V Ω Ω A
V DS > ID(o n) x R DS(on )ma x V GS = 10 V
DYNAMIC
Symbo l g f s (∗ ) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f .