DatasheetsPDF.com

STP20NE06LFP Dataheets PDF



Part Number STP20NE06LFP
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL POWER MOSFET
Datasheet STP20NE06LFP DatasheetSTP20NE06LFP Datasheet (PDF)

® STP20NE06L STP20NE06LFP N - CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP STripFET™ POWER MOSFET TYPE STP20NE06L STP20NE06LF P s s s s s V DSS 60 V 60 V R DS( on ) < 0.07 Ω < 0.07 Ω ID 20 A 13 A TYPICAL RDS(on) = 0.06 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION 1 3 2 1 2 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting tra.

  STP20NE06LFP   STP20NE06LFP



Document
® STP20NE06L STP20NE06LFP N - CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP STripFET™ POWER MOSFET TYPE STP20NE06L STP20NE06LF P s s s s s V DSS 60 V 60 V R DS( on ) < 0.07 Ω < 0.07 Ω ID 20 A 13 A TYPICAL RDS(on) = 0.06 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION 1 3 2 1 2 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value STP20NE06 V DS V DGR V GS ID ID I DM ( • ) P tot V ISO dv/dt T s tg Tj April 1999 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junct ion T emperature o o o Unit ST P20NE06F P 60 60 ± 20 V V V 13 9 80 30 0.2 2000 7 A A A W W /o C V V/ns o o 20 14 80 70 0.47  -65 to 175 175 C C 1/9 (•) Pulse width limited by safe operating area ( 1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX STP20NE06L/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 2.14 62.5 0.5 300 TO-220FP 5 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 35 V) Max Value 20 100 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 60 1 10 ± 100 Typ. Max. Unit V µA µA nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V T c = 125 oC ON (∗) Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 5 V V GS = 10 V Test Con ditions ID = 250 µ A I D = 10 A ID = 10 A 20 Min. 1 Typ. 1.7 0.07 0.06 Max. 2.0 0.085 0.07 Unit V Ω Ω A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s (∗ ) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f .


STP20NE06L STP20NE06LFP STP20NM60FP


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)