N-CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP STripFET™ II POWER MOSFET
Table 1: General Features
TYPE STP20NF06 STF20NF0...
N-CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP STripFET™ II POWER MOSFET
Table 1: General Features
TYPE STP20NF06 STF20NF06
■ ■ ■ ■ ■ ■
STP20NF06 STF20NF06
Figure 1:Package
RDS(on) < 0.07 Ω < 0.07 Ω ID 20 A 20 A(*)
VDSS 60 V 60 V
TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION
3 1 2
1 2
3
TO-220
TO-220FP
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting
transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility APPLICATIONS ■ DC MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
Part Number STP20NF06 STF20NF06 MARKING P20NF06 F20NF06 PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) EAS (2) Tstg Tj
to Rth value
Parameter STP20NF06 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature
Value STF20NF06 60 60 ± 20 20 14 80 ...
