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29LV160BE Dataheets PDF



Part Number 29LV160BE
Manufacturers Fujitsu Media Devices
Logo Fujitsu Media Devices
Description MBM29LV160BE
Datasheet 29LV160BE Datasheet29LV160BE Datasheet (PDF)

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT www.DataSheet4U.com MBM29LV160TE/BE -70/90/12 s GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are .

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT www.DataSheet4U.com MBM29LV160TE/BE -70/90/12 s GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The standard MBM29LV160TE/BE offers access times of 70 ns, 90 ns and 120 ns, allowing operation of highspeed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29LV160TE/BE is pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices. The MBM29LV160TE/BE is programmed by executing the program command sequence. This will invoke the Embedded ProgramTM* Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded EraseTM* Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margins. Any individual sector is typically erased and verified in 1.0 second. (If already preprogrammed.) within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection. (Continued) s PRODUCT LINE UP Part No. VCC = 3.3 V Ordering Part No. VCC = 3.0 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) +0.3 V –0.3 V +0.6 V –0.3 V MBM29LV160TE/160BE 70 — 70 70 30 — 90 90 90 35 — 12 120 120 50 MBM29LV160TE/BE-70/90/12 (Continued) The device also features a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory. The device features single 3.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7, by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been comleted, the device internally resets to the read mode. The MBM29LV160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any Embedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset www.DataSheet4U.com occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically reset to the read mode and will have erroneous data stored in the address locations being programmed or erased. These locations need re-writing after the Reset. Resetting the device enables the system’s microprocessor to read the boot-up firmware from the Flash memory. Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability, and cost effectiveness. The MBM29LV160TE/BE memory electrically erases all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection. * : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. s PACKAGES 48-pin plastic TSOP (I) Marking Side 48-pin plastic TSOP (I) Marking Side (FPT-48P-M19) (FPT-48P-M20) 48-pin plastic CSOP 48-pin plastic FBGA (LCC-48P-M03) (BGA-48P-M11) 2 MBM29LV160TE/BE-70/90/12 s FEATURES • 0.23 µm Process Technology • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin.


ADD8506 29LV160BE MC44002


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