SST39LF160

16 Mbit (x16) Multi-Purpose Flash SST39LF160 / SST39VF160 SST39LF/VF1603.0 & 2.7V 16Mb (x16) MPF memories Data Sheet FEATURES: Organized as 1M x16 Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF160 – 2.7-3.6V for SST39VF160 Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Low Power Consumption – Active Current: 15 mA (typical) – Standby Current: 4 µA (typical) – Auto Low Power Mode: 4 µA (typical) Sector-Erase Capability – Uniform 2 KWord sectors Fast Read Access Time – 55 ns for SST39LF160 – 70 and 90 ns for SST39VF160 Latched Address and Data Fast Erase and Word-Program – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Word-Program Time: 14 µs (typical) – Chip Rewrite Time: 15 seconds (typical) for SST39LF/VF160 Automatic Write Timing – Internal VPP Generation End-of-Write Detection – Toggle Bit – Data# Polling CMOS I/O Compatibility JEDEC Standard – Flash EEPROM Pinouts and command sets Packages Available – 48-lead TSOP (12mm x 20mm) – 48-ball TFBGA (6mm x 8mm) PRODUCT DESCRIPTION The SST39LF/VF160 devices are 1M x16 CMOS MultiPurpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF160 write (Program or Erase) with a 3.0-...