SST39VF100

1 Mbit (64K x16) Multi-Purpose Flash SST39LF100 / SST39VF100 SST39LF/VF1003.0 & 2.7V 1 Mb (x16) MPF memories Data Sheet FEATURES: Organized as 64K x16 Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF100 – 2.7-3.6V for SST39VF100 Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Low Power Consumption – Active Current: 20 mA (typical) – Standby Current: 3 µA (typical) Sector-Erase Capability – Uniform 2 KWord sectors Fast Read Access Time – 45 ns for SST39LF100 – 70 ns for SST39VF100 Latched Address and Data Fast Erase and Word-Program – Sector-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Word-Program Time: 14 µs (typical) – Chip Rewrite Time: 1 second (typical) Automatic Write Timing – Internal VPP Generation End-of-Write Detection – Toggle Bit – Data# Polling CMOS I/O Compatibility JEDEC Standard Command Sets Packages Available – 40-lead TSOP (10mm x 14mm) – 48-ball TFBGA (6mm x 8mm) PRODUCT DESCRIPTION The SST39LF/VF100 devices are 64K x16 CMOS MultiPurpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF100 and SST39VF100 write (Program or Erase) with a single voltage power supply of 3.0-3.6V and 2.7-3.6V, respectively. Featuring high performance Word-Program, the...