STP4NC50FP

N-CHANNEL 500V - 2.2Ω - 4A TO-220/TO-220FP PowerMesh™ II MOSFET TYPE STP4NC50 STP4NC50FP s s s s s STP4NC50 STP4NC50FP VDSS 500 V 500 V RDS(on) < 2.7 Ω < 2.7 Ω ID 4A 4A TYPICAL RDS(on) = 2.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 1 2 3 1 2 3 TO-220 TO-220FP DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –65 to 150 150 (1)ISD ≤ 4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Value STP4NC50 500 500 ±30 4 2.5 12 80 0.64 3.5 2000 4(*) 2.5(*) 16(*) 40 0.32 STP4NC50FP Unit V V V A A A W W/ °C V/ns V °C °C ()Pulse width limited...