STL8NH3LL
N-CHANNEL 30 V - 0.012 Ω - 8 A PowerFLAT™ ULTRA LOW GATE CHARGE STripFET™ MOSFET
PRELIMINARY DATA
Table 1: Ge...
STL8NH3LL
N-CHANNEL 30 V - 0.012 Ω - 8 A PowerFLAT™ ULTRA LOW GATE CHARGE STripFET™ MOSFET
PRELIMINARY DATA
Table 1: General Features
TYPE STL8NH3LL
s s s s s s
Figure 1: Package
RDS(on) < 0.015 Ω ID (1) 8A
VDSS 30 V
TYPICAL RDS(on) = 0.012 Ω @ 10V IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE VERY LOW GATE CHARGE LOW THRESHOLD DEVICE PowerFLAT™(3.3x3.3)
DESCRIPTION This application specific MOSFET is the lastest generation of STMicroelectronics unique “STripFET™” technology. The resulting
transistor is optimized for low on-resistance and minimal gate charge. The Chip-scaled PowerFLAT™ package allows a significant board space saving, still boosting the performance.
(Chip Scale Package)
Figure 2: Internal Schematic Diagram
APPLICATIONS s CONTROL FET IN BUCK CONVERTER
TOP VIEW
Table 2: Order Codes
Part Number STL8NH3LL Marking L8NH3LL Package PowerFLAT™ (3.3x3.3) Packaging TAPE & REEL
Rev 2 October 2004
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice
1/7
STL8NH3LL
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID (1) ID (2) IDM (3) PTOT (1) PTOT (2) Tstg Tj Parameter Drain-source Voltage (VGS= 0) Drain-gate Voltage (RGS= 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC= 25°C (Steady State) Drain Current (continuous) at TC= 100°C (Steady State) Drain Current (pulsed) Total Dissipation at TC= 25°C Total Dissipation at TC= 25°C (S...