MRF134

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF134/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB Efficiency — 55% (Typical) Small–Signal and Large–Signal Characterization Typical Performance at 400 MHz, 28 Vdc, 5.0 W Output = 10.6 dB Gain 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR Low Noise Figure — 2.0 dB (Typ) at 200 mA, 150 MHz Excellent Thermal Stability, Ideally Suited For Class A Operation D MRF134 5.0 W, to 400 MHz N–CHANNEL MOS BROADBAND RF POWER FET G S CASE 211–07, STYLE 2 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VDSS VDGR VGS ID PD Tstg Value 65 65 ±40 0.9 17.5 0.1 –65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case Symbol RθJC Value 10 Unit °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdow...