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IRG4IBC10UD Dataheets PDF



Part Number IRG4IBC10UD
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Datasheet IRG4IBC10UD DatasheetIRG4IBC10UD Datasheet (PDF)

PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT VCES = 600V VCE(on) typ. = 2.15V Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Ind.

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PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT VCES = 600V VCE(on) typ. = 2.15V Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220 Full-Pak G E @VGE = 15V, IC = 5.0A N-channel tf(typ.) = 140ns Benefits • Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED® diodes optimized for performance with IGBTs Minimized recovery characteristics require less/no snubbing TO-220 Full-Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VISOL VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolated Voltage, Terminal to case, t=1min Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec Mounting Torque, 6-32 or M3 Screw Max. 600 6.8 3.9 27 27 3.9 27 2500 ± 20 25 10 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight Typ. ––– ––– ––– 2.1 (0.075) Max. 5.0 9.0 65 ––– Units °C/W g (oz) www.irf.com 1 10/27/99 IRG4IBC10UD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES DV(BR)CES/DTJ VCE(on) VGE(th) DVGE(th)/DTJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage ƒ 600 — Temperature Coeff. of Breakdown Voltage — 0.54 Collector-to-Emitter Saturation Voltage — 2.15 — 2.61 — 2.30 Gate Threshold Voltage „ 3.0 — Temperature Coeff. of Threshold Voltage — -8.7 Forward Transconductance 2.8 4.2 Zero Gate Voltage Collector Current — — — — Diode Forward Voltage Drop — 1.5 — 1.4 Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, I C = 1.0mA 2.6 IC = 5.0A VGE = 15V See Fig. 2, 5 — V IC = 8.5A — IC = 5.0A, TJ = 150°C 6.0 VCE = VGE, I C = 250µA — mV/°C VCE = VGE, I C = 250µA — S VCE = 100V, IC = 5.0A 250 µA VGE = 0V, V CE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150°C 1.8 V IC = 4.0A See Fig. 13 1.7 IC = 4.0A, TJ = 125°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Q gc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr I rr Q rr di(rec)M/dt Min. — — — — — — — — — — — — — — — — — — — — — Diode Peak Reverse Recovery Current — — Diode Reverse Recovery Charge — — Diode Peak Rate of Fall of Recovery — During tb — Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Typ. 15 2.6 5.8 40 16 87 140 0.14 0.12 0.26 38 18 95 250 0.45 7.5 270 21 3.5 28 38 2.9 3.7 40 70 280 235 Max. Units Conditions 22 IC = 5.0A 4.0 nC VCC = 400V See Fig. 8 8.7 VGE = 15V — TJ = 25°C — ns IC = 5.0A, VCC = 480V 130 VGE = 15V, RG = 100W 210 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 18 0.33 — TJ = 150°C, See Fig. 11, 18 — ns IC = 5.0A, VCC = 480V — VGE = 15V, RG = 100W — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 42 ns TJ = 25°C See Fig. 57 TJ = 125°C 14 IF = 4.0A 5.2 A TJ = 25°C See Fig. 6.7 TJ = 125°C 15 VR = 200V 60 nC TJ = 25°C See Fig. 105 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 Details of note  through „ are on the last page 2 www.irf.com IRG4IBC10UD 6.0 5.0 Load Current ( A ) 4.0 Square w ave: For both: Duty cycle : 50% Tj = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 7.0W 60% of rated voltage 3.0 2.0 1.0 Ideal diodes 0.0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) TJ = 25 oC 10 TJ = 150 oC I C , Collector-to-Emitter Current (A) 10 TJ = 150 o C 1 TJ = 25 o C V CC = 50V 5µs PULSE WIDTH 5 6 7 8 9 10 11 12 13 14 0.1 1 V GE = 15V 20µs PULSE WIDTH 10 1 VCE , Collector-to-Emitter Voltage (V) VGE.


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