Document
PD - 93765
IRG4IBC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast Co-Pack IGBT
VCES = 600V VCE(on) typ. = 2.15V
Features
• UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220 Full-Pak
G E
@VGE = 15V, IC = 5.0A N-channel
tf(typ.) = 140ns
Benefits
• Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED® diodes optimized for performance with IGBTs Minimized recovery characteristics require less/no snubbing
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VISOL VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolated Voltage, Terminal to case, t=1min Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec Mounting Torque, 6-32 or M3 Screw
Max.
600 6.8 3.9 27 27 3.9 27 2500 ± 20 25 10 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m)
Units
V
A
V W
°C
Thermal Resistance
Parameter
RθJC RθJC RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight
Typ.
––– ––– ––– 2.1 (0.075)
Max.
5.0 9.0 65 –––
Units
°C/W g (oz)
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1
10/27/99
IRG4IBC10UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
DV(BR)CES/DTJ
VCE(on)
VGE(th) DVGE(th)/DTJ gfe ICES VFM IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Temperature Coeff. of Breakdown Voltage — 0.54 Collector-to-Emitter Saturation Voltage — 2.15 — 2.61 — 2.30 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -8.7 Forward Transconductance 2.8 4.2 Zero Gate Voltage Collector Current — — — — Diode Forward Voltage Drop — 1.5 — 1.4 Gate-to-Emitter Leakage Current — —
Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, I C = 1.0mA 2.6 IC = 5.0A VGE = 15V See Fig. 2, 5 — V IC = 8.5A — IC = 5.0A, TJ = 150°C 6.0 VCE = VGE, I C = 250µA — mV/°C VCE = VGE, I C = 250µA — S VCE = 100V, IC = 5.0A 250 µA VGE = 0V, V CE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150°C 1.8 V IC = 4.0A See Fig. 13 1.7 IC = 4.0A, TJ = 125°C ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Qge Q gc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr I rr Q rr di(rec)M/dt Min. — — — — — — — — — — — — — — — — — — — — — Diode Peak Reverse Recovery Current — — Diode Reverse Recovery Charge — — Diode Peak Rate of Fall of Recovery — During tb — Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Typ. 15 2.6 5.8 40 16 87 140 0.14 0.12 0.26 38 18 95 250 0.45 7.5 270 21 3.5 28 38 2.9 3.7 40 70 280 235 Max. Units Conditions 22 IC = 5.0A 4.0 nC VCC = 400V See Fig. 8 8.7 VGE = 15V — TJ = 25°C — ns IC = 5.0A, VCC = 480V 130 VGE = 15V, RG = 100W 210 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 18 0.33 — TJ = 150°C, See Fig. 11, 18 — ns IC = 5.0A, VCC = 480V — VGE = 15V, RG = 100W — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 42 ns TJ = 25°C See Fig. 57 TJ = 125°C 14 IF = 4.0A 5.2 A TJ = 25°C See Fig. 6.7 TJ = 125°C 15 VR = 200V 60 nC TJ = 25°C See Fig. 105 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17
Details of note through are on the last page
2
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IRG4IBC10UD
6.0
5.0
Load Current ( A )
4.0
Square w ave:
For both: Duty cycle : 50% Tj = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 7.0W
60% of rated voltage
3.0
2.0
1.0
Ideal diodes
0.0 0.1 1 10 100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
I C , Collector-to-Emitter Current (A)
TJ = 25 oC
10
TJ = 150 oC
I C , Collector-to-Emitter Current (A)
10
TJ = 150 o C
1
TJ = 25 o C V CC = 50V 5µs PULSE WIDTH
5 6 7 8 9 10 11 12 13 14
0.1 1
V GE = 15V 20µs PULSE WIDTH
10
1
VCE , Collector-to-Emitter Voltage (V)
VGE.