Si6820DQ
Vishay Siliconix
N-Channel, Reduced Qg, MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
20
rDS(on)...
Si6820DQ
Vishay Siliconix
N-Channel, Reduced Qg, MOSFET with
Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.160 @ VGS = 4.5 V 0.260 @ VGS = 3.0 V
ID (A)
"1.9 "1.5
SCHOTTKY PRODUCT SUMMARY
VKA (V)
20
VF (v) Diode Forward Voltage
0.5 V @ 1 A
IF (A)
1.5 D K
TSSOP-8
D S S G 1 2 3 4 Top View D 8 K A A A S A G
Si6820DQ
7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage (MOSFET) Reverse Voltage (
Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (
Schottky) Pulsed Foward Current (
Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (
Schottky)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C
Symbol
VDS VKA VGS ID IDM IS IF IFM
Limit
20 20 "12 "1.9 "1.5 "8 1.0 1.5 30 1.2 0.76 1.0 0.64 –55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t v 10 sec)a
Device
MOSFET
Schottky MOSFET
Schottky
Symbol
Typical
Maximum
105 125
Unit
RthJA
Maximum Junction-to-Ambient (t = steady state)a
115 130
_C/W
Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70790 S-56936—Rev. C, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600
2-1
Si6820DQ
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Par...