SI6821DQ

Si6821DQ New Product Vishay Siliconix P-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.190 @ VGS = –4.5 V 0.280 @ VGS = –3.0 V ID (A) "1.7 "1.3 SCHOTTKY PRODUCT SUMMARY VKA (V) 20 VF (V) Diode Forward Voltage 0.5 V @ 1 A IF (A) 1.5 S K TSSOP-8 D S S G 1 2 3 4 Top View D 8 K A A A D A G Si6821DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VKA VGS ID IDM IS IF IFM Limit –20 20 "12 "1.7 "1.3 "8 –1.0 1.5 30 1.2 0.76 1.0 0.64 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t v 10 sec)a Device MOSFET Schottky MOSFET Schottky Symbol Typical Maximum 105 125 Unit RthJA Maximum Junction-to-Ambient (t = steady state)a 115 130 _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70791 S-56954—Rev. C, 01-Mar-99 www.vishay.com S FaxBack 408-970-5600 2-1 Si6821DQ Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_...