SST111

J/SST111 SERIES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT FAST SWITCHING ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation (J) Continuous Power Dissipation (SST) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source -35V -35V 50mA 360mW 350mW -55 to 150°C -55 to 135°C D S G 1 2 3 TO 92 SINGLE N-CHANNEL JFET 5pA 4ns J SERIES TO-92 BOTTOM VIEW SST SERIES SOT-23 TOP VIEW D S 1 3 2 G STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. BVGSS VGS(off) VGS(F) IDSS IGSS IG ID(off) rDS(on) CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Cutoff Voltage Gate to Source Forward Voltage Drain to Source Saturation Current Gate Leakage Current Gate Operating Current Drain Cutoff Current Drain to Source On Resistance 2 TYP J/SST111 MIN -35 -3 -10 MAX J/SST112 MIN -35 -1 5 -5 MAX J/SST113 MIN -35 -3 2 MAX UNIT CONDITIONS IG = -1µA, VDS = 0V V mA VDS = 5V, ID = 1µA IG = 1mA, VDS = 0V VDS = 15V, VGS = 0V VGS = -15V, VDS = 0V VDG = 15V, ID = 10mA VDS = 5V, VGS = -10V IG = 1mA, VDS = 0V 0.7 20 -0.005 -5 0.005 1 30 1 50 1 100 -1 -1 -1 nA pA nA Ω Linear Integrated Systems 4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261 DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. gfs...