3CA8772 Transistors Datasheet

3CA8772 Datasheet PDF, Equivalent


Part Number

3CA8772

Description

TO-126 Plastic-Encapsulate Transistors

Manufacture

ETC

Total Page 3 Pages
PDF Download
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3CA8772
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3CA8772 TRANSISTOR PNP
FEATURES
Power dissipation
PCM : 1.25 W Tamb=25
Collector current
ICM : -3
A
Collector-base voltage
V(BR)CBO : -40 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 126
1. EMITTER
2.COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-100 A IE=0
-40
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO
V(BR)EBO
IC= -10 mA , IB=0
IE= -100 A IC=0
-30
-6
V
V
Collector cut-off current
ICBO VCB= -40 V , IE=0
-10 A
Collector cut-off current
Emitter cut-off current
ICEO VCE=-30 V , IB=0
IEBO VEB=-6V , IC=0
-10 A
-10 A
DC current gain
hFE VCE= -2V, IC= -1A
60
400
Collector-emitter saturation voltage
VCE(sat)
IC=-2A, IB= -0.2A
-0.5 V
Transition frequency
VCE= -5V, IC=-0.1A
f T f = 10MHz
50
MHz
CLASSIFICATION OF hFE(1)
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400

3CA8772


Features JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR£¨PNP £© TO¡ª 126 FEATURES Power dissip ation PCM : 1.25 W£¨ Tamb=25¡æ£© Collector current ICM : -3 A Collector- base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELE CTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown vol tage Collector-emitter breakdown voltag e Emitter-base breakdown voltage Collec tor cut-off current Collector cut-off c urrent Emitter cut-off current DC curre nt gain Collector-emitter saturation vo ltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) 1. EMITTE R 2.COLLECTOR 3.BASE 123 unless Test otherwise MIN specified£© TYP MAX U NIT V V V -10 -10 -10 ¦Ì A ¦Ì A ¦ A conditions Ic=-100¦Ì A £¬ IE= 0 IC= -10 mA , IB=0 IE= -100 ¦Ì A£¬ IC=0 VCB= -40 V , IE=0 VCE=-30 V , IB= 0 VEB=-6V , IC=0 -40 -30 -6 VCE= -2V, IC= -1A IC=-2A, IB= -0.2A VCE= -5V, I C=-0.1A 60 400 -0.5 V.
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