CE2A3Q

DATA SHEET COMPOUND TRANSISTOR CE2A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments. PACKAGE DRAWING (UNIT: mm) FEATURES On-chip bias resistor: R1 = 1.0 kΩ, R2 = 10 kΩ Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A On-chip dumper diode for reverse cable QUALITY GRADES Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) * IB(DC) PT Tj Tstg Ratings 60 60 15 ±2.0 ±3.0 0.03 1.0 150 −55 to +150 Unit V V V A A A W °C °C * PW ≤ 10 ms, duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D1617...