76107D HUF76107D Datasheet

76107D Datasheet PDF, Equivalent


Part Number

76107D

Description

HUF76107D

Manufacture

Fairchild Semiconductor

Total Page 11 Pages
Datasheet
Download 76107D Datasheet


76107D
Data Sheet
HUF76107D3, HUF76107D3S
January 2003
20A, 30V, 0.052 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power
MOSFETs are manufactured using
the innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications
where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay
drivers, low voltage bus switches, and power management
in portable and battery operated products.
Formerly developmental type TA76107.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76107D3
TO-251AA
76107D
HUF76107D3S
TO-252AA
76107D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76107D3ST.
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• Logic Level Gate Drive
• 20A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.052
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
©2003 Fairchild Semiconductor Corporation
HUF76107D3, HUF76107D3S Rev. B1

76107D
HUF76107D3, HUF76107D3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
30 V
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
30 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20 V
Drain Current
Continuous
Continuous
Continuous
(TC
(TC
(TC
=
=
=
211500o00CooCC, V,, VVGGGSSS===1450.VV5))V.()F.(i.gF.uig.rue. r.2e.)2. )..
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. ID
. ID
. ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
20
10.5
10
Figure 4
A
A
A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Figure 6
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35
0.30
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300 oC
260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 12)
VDS = 25V, VGS = 0V
VDS = 25V, VGS = 0V, TC = 150oC
VGS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 11)
ID = 20A, VGS = 10V (Figure 9, 10)
ID = 10.5A, VGS = 5V (Figure 9)
ID = 10A, VGS = 4.5V (Figure 9)
Thermal Resistance Junction to Case
RθJC
Thermal Resistance Junction to Ambient
RθJA
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
(Figure 3)
TO-251, TO-252
VDD = 15V, ID 10A, RL = 1.50,
VGS = 4.5V, RGS = 33
(Figure 15)
MIN TYP MAX UNITS
30 - - V
- - 1 µA
- - 250 µA
-
-
±100
nA
1 - 3V
- 0.042 0.052
- 0.058 0.080
- 0.065 0.085
- - 3.3 oC/W
- - 100 oC/W
- - 120 ns
- 14 - ns
- 66 - ns
- 16 - ns
- 22 - ns
- - 57 ns
©2003 Fairchild Semiconductor Corporation
HUF76107D3, HUF76107D3S Rev. B1


Features Data Sheet HUF76107D3, HUF76107D3S Janu ary 2003 20A, 30V, 0.052 Ohm, N-Channe l, Logic Level UltraFET Power MOSFETs T hese N-Channel power MOSFETs are manufa ctured using the innovative UltraFET™ process. This advanced process technol ogy achieves the lowest possible on-res istance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhib its very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulat ors, switching converters, motor driver s, relay drivers, low voltage bus switc hes, and power management in portable a nd battery operated products. Formerly developmental type TA76107. Ordering I nformation PART NUMBER PACKAGE BRAND HUF76107D3 TO-251AA 76107D HUF7610 7D3S TO-252AA 76107D NOTE: When orde ring, use the entire part number. Add t he suffix T to obtain the TO-252AA variant in tape and reel, e.g..
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